Tubo de efeito de campo MOSFET - sele??o de tubo MOS - Solu??o de gerenciamento de energia - Shanghai Leiditech Electronics Technology Co., Ltd.

LMSC05N02A

  • PackageSOT-23-6
  • Vdss Min(V) Drain-Source voltage20/-20
  • Drain Current ID(A)25℃5.6@N -3.7@P
  • Vgs(V)10
  • Vth Typ0.62/-0.62
  • Ron(10V) (mΩ)Typ-
  • Ron(10V) (mΩ) Max-
  • Ron(4.5V) (mΩ)Typ19.5/49
  • Ron(4.5V) (mΩ)Max25/64
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    Recursos/Aplicações Exibição de modelos similares Pesquisar materiais alternativos
    Recursos/Aplicações
    Product Summary
    NMOS
    .VDs
    20V
    .lD
    5.6A
    RDs(ON)( at VGS=4.5V)
    <25mohm
     RDs(ON)( at VGS=2.5V)
    <32mohm
    . RDs(ON)( at VGS=1.8V)
    <49mohm
    PMOS
    .VDs
    -20V
    .lD
    -3.7A
    RDs(ON)( at VGS=-4.5V)
    <64mohm
    RDs(ON)( at VGS=-2.5V)
    <80mohm
     RDs(ON)( at VGS=-1.8V)
    <110mohm
    100% VVDs Tested
    General Description
    Trench Power LV MOSFET technology
    High density cell design for low Ros(on)
    · High Speed switching
    Applications
    Wireless charger
     Load switch
    Power management
    Exibição de modelos similares
    LMTL7ND02 , N , Vdss= 20 V, ID(25℃)= 7 A, VGS= 10 V, VTH= 0.7 V, Ron(4.5V)Typ= 14 mΩ, Ron(4.5V)Max= 20 mΩ, SOT-23-6
    LM6L4P02 , P , Vdss= -20 V, ID(25℃)= -4 A, VGS= 8 V, VTH= 0.6 V, Ron(4.5V)Typ= 37 mΩ, Ron(4.5V)Max= 50 mΩ, SOT-23-6
    LM6L5P03 , P , Vdss= -30 V, ID(25℃)= -5.2 A, VGS= 20 V, VTH= -1.0..-3.0 V, Ron(10V)Typ= 41 mΩ, Ron(10V)Max= 55 mΩ, SOT-23-6
    LMT6L7P04 , P , Vdss= -40 V, ID(25℃)= -7 A, VGS= 20 V, VTH= -1.6 V, Ron(10V)Typ= 28 mΩ, Ron(10V)Max= 35 mΩ, SOT-23-6
    LMT6L5P06 , P , Vdss= -60 V, ID(25℃)= -5 A, VGS= 20 V, VTH= -1.65 V, Ron(10V)Typ= 60 mΩ, Ron(10V)Max= 75 mΩ, SOT-23-6
    LM6604 , N+P , Vdss= 20/-20 V, ID(25℃)= 2.8/-2.8 A, VGS= 12 V, VTH= 0.75/-0.7 V, Ron(4.5V)Typ= 47/70 mΩ, Ron(4.5V)Max= 65/96 mΩ, SOT-23-6
    LMSC05N02A , N+P , Vdss= 20/-20 V, ID(25℃)= 5.6/ -3.7 A, VGS= 10 V, VTH= 0.62/-0.62 V, Ron(4.5V)Typ= 19.5/49 mΩ, Ron(4.5V)Max= 25/64 mΩ, SOT-23-6
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